Kink and crack interfaces in deformed 6H-SiC single crystals
Conference
·
OSTI ID:94049
- Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Materials Science and Engineering
When a 6H-SiC single crystal is deformed under indentation or uniaxial compression in orientations not favorable for the activation of the 1/3[11{bar 2}0](0001) easy glide system the secondary slip system is activated. Additionally, for low- temperature deformation, ``kinks`` and/or micro-cracks form in the crystal. In this paper, experimental results on relatively low-temperature compression and indentation tests of single crystal 6H-SiC, and the microstructure of the deformed crystals, are presented. Based on the results, the secondary slip system in 6H-SiC has been determined to be 1/3[11{bar 2}0](1100), which may actually be a combination of alternate glide of 1/3[11{bar 2}0] dislocations on the (1{bar 1}02) and (1{bar 1}0{bar 2}) planes. Further, dislocation mechanisms for the nucleation of prism-plane and basal-plane cracks, and for the process of kinking, in deformed 6H-SiC are proposed.
- DOE Contract Number:
- FG02-93ER45496
- OSTI ID:
- 94049
- Report Number(s):
- CONF-941144--; ISBN 1-55899-258-8
- Country of Publication:
- United States
- Language:
- English
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