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Title: Fabrication and Characterization of Cd1-xMgxTe Thin Films and Their Application in Solar Cells

Abstract

No abstract prepared.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
939283
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Thin-Film Compound Semiconductor Photovoltaics - 2007: Proceedings of the Materials Research Society Symposium held 9-13 April 2007, San Francisco, California; Materials Research Society Symposium Proceedings, Vol. 1012; Related Information: Paper No. 1012-Y02-02
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; FABRICATION; SOLAR CELLS; THIN FILMS; Solar Energy - Photovoltaics

Citation Formats

Dhere, R., Ramanathan, K., Scharf, J., Young, D., To, B., Duda, A., Moutinho, H., and Noufi, R. Fabrication and Characterization of Cd1-xMgxTe Thin Films and Their Application in Solar Cells. United States: N. p., 2007. Web.
Dhere, R., Ramanathan, K., Scharf, J., Young, D., To, B., Duda, A., Moutinho, H., & Noufi, R. Fabrication and Characterization of Cd1-xMgxTe Thin Films and Their Application in Solar Cells. United States.
Dhere, R., Ramanathan, K., Scharf, J., Young, D., To, B., Duda, A., Moutinho, H., and Noufi, R. Mon . "Fabrication and Characterization of Cd1-xMgxTe Thin Films and Their Application in Solar Cells". United States. doi:.
@article{osti_939283,
title = {Fabrication and Characterization of Cd1-xMgxTe Thin Films and Their Application in Solar Cells},
author = {Dhere, R. and Ramanathan, K. and Scharf, J. and Young, D. and To, B. and Duda, A. and Moutinho, H. and Noufi, R.},
abstractNote = {No abstract prepared.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}

Conference:
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  • Theoretical modeling of two-junction tandem solar cells shows that for optimal device performance, the bandgap of the top cell should be in the range of 1.6 to 1.8 eV. Cd1-xMgxTe (CMT) alloys have a lattice constant close to that of CdTe, and the addition of a small amount of Mg changes the bandgap considerably. In this paper, we present our work on developing CMT for solar cell applications. CMT films were prepared by vacuum deposition with co-evaporation of CdTe and Mg on substrates heated to 300-400 C. Films with a composition in the range of x = 0 to 0.66more » were fabricated, and optical analysis of the films showed that the bandgap of the samples ranged from 1.5 to 2.3 eV and varied linearly with composition. For the fabrication of devices using these alloy films, we also investigated the effect of post-deposition CdCl2 heat treatment. We have investigated junctions between CdS and CMT alloys in the bandgap range of 1.5 to 1.8 eV for tandem cell applications. We have also worked on the ohmic contacts to the CMT alloy films using Cu/Au bilayers, and the preliminary data shows a significant effect of the contact processing on the device performance.« less
  • Fabrication and characterization of Cd{sub 1-x}Mg{sub x}Te(CMT) alloys and to determine their potential for device applications. Main emphasis is on the development of the devices in 1.5 to 1.8 eV range for the top cell of two-junction tandem solar cells. The conclusions are: (1) CMT alloy films with a wide composition range were fabricated; (2) the optical band gap shows a systematic variation with composition and CMT alloy films withstood the commonly used device processing steps for CdTe; and (3) they have fabricated cells with 5% efficiency in the energy gap range of 1.5 to 1.7 eV and established themore » viability of CMT for device applications.« less
  • Theoretical modeling of two-junction tandem solar cells shows that for optimal device performance, the bandgap of the top cell should be in the range of 1.6 to 1.8 eV. Cd{sub 1-x}Mg{sub x}Te (CMT) alloys have a lattice constant close to that of CdTe, and the addition of a small amount of Mg changes the bandgap considerably. In this paper, we present our work on developing CMT for solar cell applications. CMT films were prepared by vacuum deposition with co-evaporation of CdTe and Mg on substrates heated to 300-400 C. Films with a composition in the range of x=0 to 0.66more » were fabricated, and optical analysis of the films showed that the bandgap of the samples ranged from 1.5 to 2.3 eV and varied linearly with composition. For the fabrication of devices using these alloy films, we also investigated the effect of post-deposition CdCI2 heat treatment. We have investigated junctions between CdS and CMT alloys in the bandgap range of 1.5 to 1.8 eV for tandem cell applications. We have also worked on the ohmic contacts to the CMT alloy films using Cu/Au bilayers, and the preliminary data shows a significant effect of the contact processing on the device performance. We present the results on the materials properties of these alloys and the effect of post deposition treatments on the film properties and device performance for different alloy compositions and compare them to similar CdTe devices to determine their applicability in tandem solar cell applications.« less
  • The electrodeposition technique previously developed by the present authors for in situ growth of p-type CdTe thin films, has been further improved using As as an acceptor dopant. Photovoltaic-quality films were grown on conducting glass and Mo substrates and characterized by scanning electron microscopy, electron probe microanalyses, and Auger electron spectroscopy. These films were subsequently utilized in the construction of inverted photovoltaic cell structures comprising the n-CdS/p-CdTe heterojunction. Efficiencies approaching the 5% level (AM1 insolation) have been obtained thus far on small-area (approx.0.20 cm/sup 2/) devices.