Self-Assembly of Well-Aligned 3C-SiC Ripples by Focused Ion Beam

Journal Article · Wed May 14 04:00:00 EDT 2008 · Applied Physics Letters, 92(19):193107, 1-3

DOI:https://doi.org/10.1063/1.2927473· OSTI ID:937045

Zhang, Jiaming; Wei, Qiangmin; Lian, Jie; Jiang, Weilin; Weber, William J; Ewing, Rodney C

Well-aligned ripple structures on single crystal 3C-SiC surface were created and imaged in real time by focused ion beam (FIB) bombardment. Ex situ atomic force microscopy was applied to investigate topography. The ripple structure was formed by ion sputtering beyond a critical incidence angle (~50°), and its characteristic wavelength varied from 158 nm to 296 nm with the incidence angle and ion beam flux. Furthermore, the geometry, ordering and homogeneity of the self-assembled surface ripples can be well controlled by varying the ion beam incidence angle and beam current, as required for the formation of nanostructures used in SiC optical and electronic applications.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 937045
• Report Number(s): PNNL-SA-59126; KC0201020
• Journal Information: Applied Physics Letters, 92(19):193107, 1-3, Journal Name: Applied Physics Letters, 92(19):193107, 1-3 Journal Issue: 19 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALIGNMENT
BEAM CURRENTS
CARBON
Focused ion beam
INCIDENCE ANGLE
ION BEAMS
MICROSTRUCTURE
MONOCRYSTALS
Ripples
SILICON CARBIDES
SURFACE PROPERTIES
Silicon carbide