Dielectric properties of PLZT film-on-foil capacitors.
We have deposited Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on nickel foils to create film-on-foil capacitor sheets. Measurements with PLZT films on LaNiO{sub 3}-buffered Ni foils yielded the following: relative permittivity {approx} 1300 and dielectric loss (tan {delta}) {approx} 0.05, leakage current density of 6.6 x 10{sup ? }9 A/cm{sup 2} (at 25 C) and 1.4 x 10{sup -8} A/cm{sup 2} (at 150 C), and mean breakdown field strength > 2.4 MV/cm. Based on the hysteresis loop measurement, an energy storage density of {approx} 17 J/cm{sup 3} was obtained for such a capacitor at 50% of the mean breakdown field.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- EE
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 935286
- Report Number(s):
- ANL/ES/JA-61222; MLETDJ; TRN: US200815%%582
- Journal Information:
- Mater. Lett., Vol. 62, Issue 20 ; Jul. 31, 2008; ISSN 0167-577X
- Country of Publication:
- United States
- Language:
- ENGLISH
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