Development of PLZT dielectrics on base-metal foils for embedded capacitors.
- Energy Systems
We have deposited Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on nickel and copper substrates to create film-on-foil capacitors that exhibit excellent dielectric properties and superior breakdown strength. Measurements with PLZT films on LaNiO{sub 3}-buffered Ni foils yielded the following: relative permittivity of 1300 (at 25 C) and 1800 (at 150 C), leakage current density of 6.6 x 10{sup -9} A/cm{sup 2} (at 25 C) and 1.4 x 10{sup -8} A/cm{sup 2} (at 150 C), and mean breakdown field strength {approx}2.5 MV/cm. With PLZT deposited directly on Cu foils, we observed dielectric constant {approx}1100, dielectric loss (tan {delta}) {approx}0.06, and leakage current density of 7.3 x 10{sup -9} A/cm{sup 2} when measured at room temperature.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- EE
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1015934
- Report Number(s):
- ANL/ES/CP-62275
- Journal Information:
- J. Eur. Ceram. Soc., Journal Name: J. Eur. Ceram. Soc. Journal Issue: 2 ; Jan. 2010 Vol. 30; ISSN 1385-3449
- Country of Publication:
- United States
- Language:
- ENGLISH
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