YBa2Cu3O7-δ Formation by Processing of Laser-Ablated, Fluorine-Free Precursor Films
- ORNL
Epitaxial YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} was formed by processing of laser-ablated, fluorine-free precursor films. The depositions were conducted at room temperature in low oxygen pressure on LaAlO{sub 3}(LAO) single crystal substrates. Processing was done in the same deposition chamber by heating the precursor film to reaction temperatures of 750-850degC in a reducing gas ambient, and then raising the oxygen pressure to the conversion point. Typical processing times are a few minutes, corresponding to minimum YBCO growth rates of 1 nm/s. XRD analysis shows epitaxial growth and high crystallinity, although measured {Tc} values are somewhat suppressed at 88 K, with resulting critical current density, J{sub c} of about 1 MA/cm2 at 77 K, as determined by magnetic hysteresis. Properties indicate that the materials lack appropriate level of defects needed both for rapid oxygenation and flux pinning.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- OE USDOE - Office of Electric Transmission and Distribution
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 931695
- Resource Relation:
- Conference: Applied Superconductor Conference, Seattle, WA, USA, 20060827, 20060901
- Country of Publication:
- United States
- Language:
- English
Similar Records
Texture formation and superconducting properties of YBa{sub 2}Cu{sub 3}O{sub x} thin films prepared by solution process on LaAlO{sub 3} single crystals.
Epitaxial thin films of YBa sub 2 Cu sub 3 O sub 7 minus x on LaAlO sub 3 substrates deposited by plasma-enhanced metalorganic chemical vapor deposition