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Title: YBa 2Cu 3O 7-δ Formation by Processing of Laser-Ablated, Fluorine-Free Precursor Films

Abstract

Epitaxial YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} was formed by processing of laser-ablated, fluorine-free precursor films. The depositions were conducted at room temperature in low oxygen pressure on LaAlO{sub 3}(LAO) single crystal substrates. Processing was done in the same deposition chamber by heating the precursor film to reaction temperatures of 750-850degC in a reducing gas ambient, and then raising the oxygen pressure to the conversion point. Typical processing times are a few minutes, corresponding to minimum YBCO growth rates of 1 nm/s. XRD analysis shows epitaxial growth and high crystallinity, although measured {Tc} values are somewhat suppressed at 88 K, with resulting critical current density, J{sub c} of about 1 MA/cm2 at 77 K, as determined by magnetic hysteresis. Properties indicate that the materials lack appropriate level of defects needed both for rapid oxygenation and flux pinning.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
OE USDOE - Office of Electric Transmission and Distribution
OSTI Identifier:
931695
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: Applied Superconductor Conference, Seattle, WA, USA, 20060827, 20060901
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; YTTRIUM OXIDES; BARIUM OXIDES; COPPER OXIDES; ABLATION; LASER RADIATION; PRECURSOR; CURRENT DENSITY; CRITICAL CURRENT; SUBSTRATES; CRYSTAL GROWTH; TRANSITION TEMPERATURE

Citation Formats

Kim, Kyunghoon, Zhang, Yifei, Feenstra, Roeland, Christen, David K, Christen, Hans M, Cook, Sylvester W, List III, Frederick Alyious, Tao, Jing, Pennycook, Stephen J, and Zuev, Yuri L. YBa2Cu3O7-δ Formation by Processing of Laser-Ablated, Fluorine-Free Precursor Films. United States: N. p., 2007. Web.
Kim, Kyunghoon, Zhang, Yifei, Feenstra, Roeland, Christen, David K, Christen, Hans M, Cook, Sylvester W, List III, Frederick Alyious, Tao, Jing, Pennycook, Stephen J, & Zuev, Yuri L. YBa2Cu3O7-δ Formation by Processing of Laser-Ablated, Fluorine-Free Precursor Films. United States.
Kim, Kyunghoon, Zhang, Yifei, Feenstra, Roeland, Christen, David K, Christen, Hans M, Cook, Sylvester W, List III, Frederick Alyious, Tao, Jing, Pennycook, Stephen J, and Zuev, Yuri L. Mon . "YBa2Cu3O7-δ Formation by Processing of Laser-Ablated, Fluorine-Free Precursor Films". United States. doi:.
@article{osti_931695,
title = {YBa2Cu3O7-δ Formation by Processing of Laser-Ablated, Fluorine-Free Precursor Films},
author = {Kim, Kyunghoon and Zhang, Yifei and Feenstra, Roeland and Christen, David K and Christen, Hans M and Cook, Sylvester W and List III, Frederick Alyious and Tao, Jing and Pennycook, Stephen J and Zuev, Yuri L},
abstractNote = {Epitaxial YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} was formed by processing of laser-ablated, fluorine-free precursor films. The depositions were conducted at room temperature in low oxygen pressure on LaAlO{sub 3}(LAO) single crystal substrates. Processing was done in the same deposition chamber by heating the precursor film to reaction temperatures of 750-850degC in a reducing gas ambient, and then raising the oxygen pressure to the conversion point. Typical processing times are a few minutes, corresponding to minimum YBCO growth rates of 1 nm/s. XRD analysis shows epitaxial growth and high crystallinity, although measured {Tc} values are somewhat suppressed at 88 K, with resulting critical current density, J{sub c} of about 1 MA/cm2 at 77 K, as determined by magnetic hysteresis. Properties indicate that the materials lack appropriate level of defects needed both for rapid oxygenation and flux pinning.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}

Conference:
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