In situ investigation of the selenization kinetics of Cu-Ga precursors using time-resolved high-temperature x-ray diffraction

Journal Article · Sun Dec 31 23:00:00 EST 2006 · Thin Solid Films

DOI:https://doi.org/10.1016/j.tsf.2006.12.173· OSTI ID:931572

Kim, Woo Kyoung ^[1]; Payzant, E Andrew ^[2]; Anderson, Timothy J ^[1]

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1. University of Florida
2. ORNL

In-situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of CuGaSe2 formation from Cu-Ga precursors during selenization. The precursor films were deposited in a migration enhanced molecular beam epitaxial reactor on Mo-coated thin glass substrates. During the selenization CuSe forms in the temperature range of approximately 260 to 370 C, and the onset of formation of CuGaSe2 occurred at approximately 300 C. The kinetic analysis using a modified Avrami model suggests the formation of CuGaSe2 from selenization of Cu-Ga films follows a one-dimensional diffusion-controlled reaction with an apparent activation energy of 109 ( 7) kJ/mol.

• Research Organization: Oak Ridge National Laboratory (ORNL); High Temperature Materials Laboratory
• Sponsoring Organization: EE USDOE - Office of Energy Efficiency and Renewable Energy (EE)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 931572
• Journal Information: Thin Solid Films, Journal Name: Thin Solid Films Journal Issue: 15 Vol. 515
• Country of Publication: United States
• Language: English