Solid-State Formation of Titanium Carbide and Molybdenum Carbide as Contcts for Carbon-Containing Semiconductors

Journal Article · Sun Jan 01 04:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2180436· OSTI ID:930564

Leroy, W; Detavernier, C; van Meirhaeghe, R; Kellock, A; Lavoie, C

Metal carbides are good candidates to contact carbon-based semiconductors (SiC, diamond, and carbon nanotubes). Here, we report on an in situ study of carbide formation during the solid-state reaction between thin Ti or Mo films and C substrates. Titanium carbide (TiC) was previously reported as a contact material to diamond and carbon nanotubes. However, the present study shows two disadvantages for the solid-state reaction of Ti and C. First, because Ti reacts readily with oxygen, a capping layer should be included to enable carbide formation. Second, the TiC phase can exist over a wide range of composition (about 10%, i.e., from Ti{sub 0.5}C{sub 0.5} to Ti{sub 0.6}C{sub 0.4}), leading to significant variations in the properties of the material formed. The study of the Mo-C system suggests that molybdenum carbide (Mo{sub 2}C) is a promising alternative, since the phase shows a lower resistivity (about 45% lower than for TiC), the carbide forms below 900 {sup o}C, and its formation is less sensitive to oxidation as compared with the Ti-C system. The measured resistivity for Mo{sub 2}C is p=59 {mu}{Omega} cm, and from kinetic studies an activation energy for Mo{sub 2}C formation of E{sub a}=3.15+/-0.15 eV was obtained.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 930564
• Report Number(s): BNL--80723-2008-JA
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CARBIDES
CARBON
DIAMONDS
KINETICS
MOLYBDENUM CARBIDES
NANOTUBES
OXIDATION
OXYGEN
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SUBSTRATES
THIN FILMS
TITANIUM CARBIDES
national synchrotron light source