Thin Film Solid-State Reactions Forming Carbides as Contact Materials for Carbon-Containing Semiconductors

Journal Article · Mon Jan 01 04:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2561173· OSTI ID:930660

Leroy, W; Detavernier, C; Van Meirhaeghe, R; Lavoie, C

Metal carbides are good candidates to contact carbon-based semiconductors (SiC, diamond, and carbon nanotubes). Here, we report on an in situ study of carbide formation during the solid-state reaction between thin films. The solid-state reaction was examined between 11 transition metals (W, Mo, Fe, Cr, V, Nb, Mn, Ti, Ta, Zr, and Hf) and an amorphous carbon layer. Capping layers (C or TiN) of different thicknesses were applied to prevent oxidation. Carbide formation is evidenced for nine metals and the phases formed have been identified (for a temperature ranging from 100 to 1100 C). W first forms W{sub 2}C and then WC; Mo forms Mo{sub 2}C; Fe forms Fe{sub 3}C; Cr first forms metastable phases Cr{sub 2}C and Cr{sub 3}C{sub 2-x}, and finally forms Cr{sub 3}C{sub 2}; V forms VC{sub x}; Nb transforms into Nb{sub 2}C followed by NbC; Ti forms TiC; Ta first forms Ta{sub 2}C and then TaC; and Hf transforms into HfC. The activation energy for the formation of the various carbide phases has been obtained by in situ x-ray diffraction.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 930660
• Report Number(s): BNL--81142-2008-JA
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CARBIDES
CARBON
ELECTRIC CONTACTS
SEMICONDUCTOR DEVICES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
national synchrotron light source