High-Resolution TEM Observation of AlN Grown on SiC and Sapphire Substrates

Journal Article · Sun Jan 01 04:00:00 EST 2006 · Materials Science in Semiconductor Processing

DOI:https://doi.org/10.1016/j.mssp.2006.01.055· OSTI ID:929837

Bai, J; Huang, X; Dudley, M

High-resolution TEM has been carried out on AlN epifilms grown on both on-axis and off-cut SiC substrates to study the state of strain relaxation at the interface and the defects formed in the AlN films. Prismatic stacking faults (PSF) are observed forming at I{sub 1} type substrate steps. These PSFs expand into the further grown GaN film and form complicated intersecting configurations in the off-cut sample while they annihilate each other and form enclosed domains at the near-interface region in the on-axis sample. A set of 60{sup o} misfit dislocations (MDs) are observed along <1 0 {bar 1} 0> orientation, in contrast to the general observations of 60{sup o} complete MDs along <1 1 {bar 2} 0> orientation reported in literature. These MDs are suggested as geometric partial misfit dislocations which serve both to relax in-plane mismatch and accommodate stacking differences at substrate steps of I{sub 2} type.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 929837
• Report Number(s): BNL--80401-2008-JA
• Journal Information: Materials Science in Semiconductor Processing, Journal Name: Materials Science in Semiconductor Processing Vol. 9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
DISLOCATIONS
FILMS
ORIENTATION
SAPPHIRE
SILICON CARBIDES
STACKING FAULTS
STRESS RELAXATION
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
national synchrotron light source