Features of formation and propagation of 60 deg. and 90 deg. misfit dislocations in Ge{sub x}Si{sub 1-x}/Si (x{approx}0.4-0.5) films caused by Si substrate misorientation from (001)
- Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation)
We have studied the dislocation structure at the initial stage of relaxation of Ge{sub x}Si{sub 1-x} films (x{approx}0.4-0.5) grown on Si substrates tilted 6 deg. about the <011> axis. It is demonstrated that edge misfit dislocations (MDs) in the miscut direction arise in the form of short segments on intersections of 60 deg. MDs. Substrate misorientation from the singular plane made it possible to discover the MD configurations consisting of a short segment of an edge MD and only two 60 deg. MDs diverging from this segment in the miscut direction.
- OSTI ID:
- 21120666
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 92; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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