Detection of low energy single ion impacts in micron scaletransistors at room temperature

Journal Article · Mon Oct 15 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2805634· OSTI ID:929678

Batra, A; Weis, C D; Reijonen, J; Persaud, A; Schenkel, T; Cabrini, S; Lo, C C; Bokor, J

We report the detection of single ion impacts throughmonitoring of changes in the source-drain currents of field effecttransistors (FET) at room temperature. Implant apertures are formed inthe interlayer dielectrics and gate electrodes of planar, micro-scaleFETs by electron beam assisted etching. FET currents increase due to thegeneration of positively charged defects in gate oxides when ions(121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implantdamage is repaired by rapid thermal annealing, enabling iterative cyclesof device doping and electrical characterization for development ofsingle atom devices and studies of dopant fluctuationeffects.

• Research Organization: Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 929678
• Report Number(s): LBNL--63503; BnR: 400403909
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
APERTURES
ATOMS
DEFECTS
DETECTION
DIELECTRIC MATERIALS
ELECTRODES
ELECTRON BEAMS
ETCHING
FIELD EFFECT TRANSISTORS
FLUCTUATIONS
MONITORING
OXIDES
TRANSISTORS
ion implantation singleatom devices quantum compterdevelopment