Ion Implanted Ge:B Far Infrard Blocked Impurity BandDetectors

Journal Article · Mon Jun 12 04:00:00 EDT 2006 · Infrared Physics and Technology

OSTI ID:927181

Beeman, J W; Goyal, S; Reichertz, L A; Haller, E E

Ge Blocked Impurity Band (BIB) photoconductors have the potential to replace stressed Ge:Ga photoconductors for far-infrared astronomical observations. A novel planar BIB device has been fabricated in which ion-implanted boron is used to form the blocking and absorbing layers of necessary purity and compensation. The effect of doping in the infrared active layer on the far-infrared photoconductive response has been studied, and the optimum doping concentration is found to be {approx} 4 x 10{sup 16} cm{sup -3}. Devices doped near this concentration show good blocking characteristics with low dark currents. The spectral response extends to {approx} 45 cm{sup -1}, clearly showing the formation of an impurity band. Under low background testing conditions these devices attain a responsivity of 0.12 A/W and NEP of 5.23 x 10{sup -15} W/Hz{sup -1/2}.

• Research Organization: Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director, Office of Science; National Aeronautics andSpace Administration
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 927181
• Report Number(s): LBNL--60444
• Journal Information: Infrared Physics and Technology, Journal Name: Infrared Physics and Technology Journal Issue: 1 Vol. 51
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
PHOTOCONDUCTORS
SPECTRAL RESPONSE
TESTING