Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties.
Journal Article
·
· Proposed for publication in Journal of Microelectronic Engineering.
OSTI ID:924246
- Vanderbilt University, Nashville, TN
Abstract Not Provided
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 924246
- Report Number(s):
- SAND2003-1943J
- Journal Information:
- Proposed for publication in Journal of Microelectronic Engineering., Journal Name: Proposed for publication in Journal of Microelectronic Engineering.
- Country of Publication:
- United States
- Language:
- English
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