Reactions and Diffusion During Annealing-Induced H(+) Generation in SOI Buried Oxides
Journal Article
·
· Microelectronics Engineering
OSTI ID:7451
- Sandia National Laboratories
We report experimental results suggesting that mobile protons are generated at strained Si-O-Si bonds near the Si/SiO2 interface during annealing in forming gas. Our data further suggest that the presence of the top Si layer plays a crucial role in the mobile H+ generation process. Finally, we show that the diffusion of the reactive species (presumably H2 or H0) towards the H+ generation sites occurs laterally along the buried oxide layer, and can be impeded significantly due to the presence of trapping sites in the buried oxide.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7451
- Report Number(s):
- SAND99-1430J; ON: DE00007451
- Journal Information:
- Microelectronics Engineering, Journal Name: Microelectronics Engineering
- Country of Publication:
- United States
- Language:
- English
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