H{sup +} motion in SiO{sub 2}: Incompatible results from hydrogen-annealing and radiation models

Journal Article · Tue Dec 01 04:00:00 EST 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.736460· OSTI ID:323913

Stahlbush, R E; Hughes, H L ^[1]; Lawrence, R K ^[2]

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1. Naval Research Lab., Washington, DC (United States)
2. ARACOR, Oxon Hill, MD (United States)

Two models that incorporate the same mobile H{sup +} entity are the radiation model by McLewan and the mobile charge model of hydrogen-annealed oxide by Vanheusden et al. Mobile charge in hydrogen-annealed silicon-on-insulator (SOI) buried oxides before and after irradiation was studied to investigate discrepancies between the two models. The authors examined Unibond, low-dose SIMOX, and single- and triple-implant standard-dose SIMOX as well as single- and triple-implant SIMOX with supplemental oxygen implantation. To measure H{sup +} motion as fast as 0.01 sec they developed a gate pulse method and combined with standard I-V techniques to measure the full range of H{sup +} response times. All but single-implant SIMOX exhibit mobile H{sup +} that can be cycled between the Si/SiO{sub 2} interfaces without reacting or being trapped. Trapping near the top interface attenuates the cycling of H{sup +} in single-implant SIMOX. The transit H{sup +} times were strongly affected by defects in the oxides and varied by an order of magnitude in oxides with the same thickness. The transit time varied linearly with oxide thickness. The effects of irradiation on the mobile H{sup +} was studied to see if the irradiation would introduce defects that modify the H{sup +} behavior and that bring the two models into agreement. No convergence was observed. After irradiation, H{sup +} could be cycled between the Si/SiO{sub 2} interfaces without reacting and its transit time across the oxide was not altered.

• OSTI ID: 323913
• Report Number(s): CONF-980705--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
ELECTRICAL PROPERTIES
HYDROGEN IONS 1 PLUS
ION MOBILITY
MATHEMATICAL MODELS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICON
SILICON OXIDES
TRAPPING