N incorporation, composition and electronic structure in N-doped TiO2(001) anatase epitaxial films grown on LaAlO3(001)

Journal Article · Tue Jan 01 04:00:00 EST 2008 · Surface Science, 602(1):133-141

DOI:https://doi.org/10.1016/j.susc.2007.09.061· OSTI ID:922882

Cheung, Sau H; Nachimuthu, Ponnusamy; Engelhard, Mark H; Wang, Chong M; Chambers, Scott A

We have investigated the properties of N-doped TiO2 anatase grown by plasma-assisted molecular beam epitaxy on LaAlO3(001) substrates. Phase-pure epitaxial films in which N substitutes for O with no secondary phases formation occur only over a narrow range of fluxes. The N solubility is limited to ~0.2 at. % of the anions and is an order of magnitude lower than that found in N-doped rutile. N substitution for O results in N 2p derived states off the top of the anatase valence band and the associated red shift in the optical bandgap.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 922882
• Report Number(s): PNNL-SA-56452; 19393; KC0301010
• Journal Information: Surface Science, 602(1):133-141, Journal Name: Surface Science, 602(1):133-141 Journal Issue: 1 Vol. 602; ISSN SUSCAS; ISSN 0039-6028
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANIONS
ELECTRONIC STRUCTURE
Environmental Molecular Sciences Laboratory
MOLECULAR BEAM EPITAXY
RED SHIFT
RUTILE
SOLUBILITY
SUBSTRATES
VALENCE