Chemical mapping of polymer photoresists by scanning transmissionx-ray microscopy
Journal Article
·
· Journal of Vacuum Science Technology B
OSTI ID:919908
Scanning transmission x-ray microscopy (STXM) is shown to be a powerful imaging technique that provides chemical selectivity and high spatial resolution ({approx}35 nm) for studying chemically amplified photoresists. Samples of poly(4-t-butoxycarbonyloxystyrene) PTBOCST resist, imprinted by deep ultraviolet lithography with a line/space pattern of 1.10 {micro}m/0.87 {micro}m followed by a post-exposure bake, are used to demonstrate STXM imaging capabilities to extract photoresist latent images. Chemical contrast is obtained by measuring the x-ray absorption at an energy of 290.5 eV, corresponding to a carbon K shell electronic transition to the unoccupied {pi}* molecular orbital of the PTBOCST carbonyl group. A quantitative analysis provides the spatial distribution of the fraction of the unexposed and deprotected polymers remaining after the post-exposure bake stage as well as the thickness of both regions. Both chemical and topographical contributions to the total contrast are estimated. Advantages and limitations of STXM in comparison with other imaging techniques with chemical specificity are discussed.
- Research Organization:
- Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science; National ScienceFoundation
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 919908
- Report Number(s):
- LBNL--56709; BnR: KC0302030
- Journal Information:
- Journal of Vacuum Science Technology B, Journal Name: Journal of Vacuum Science Technology B Journal Issue: 4 Vol. 23; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
Similar Records
X-ray absorption spectroscopy to probe surface composition and surface deprotection in photoresist films.
Critical dimension sensitivity to post-exposure bake temperaturevariation in EUV photoresists
Architectural Effects on Reaction-Diffusion Kinetics in Molecular Glass Photoresists
Journal Article
·
Tue Jun 01 00:00:00 EDT 2004
· Proposed for publication in Surface Science.
·
OSTI ID:953335
Critical dimension sensitivity to post-exposure bake temperaturevariation in EUV photoresists
Conference
·
Mon Jan 10 23:00:00 EST 2005
·
OSTI ID:900653
Architectural Effects on Reaction-Diffusion Kinetics in Molecular Glass Photoresists
Journal Article
·
Thu Dec 31 23:00:00 EST 2009
· Chemistry of Materials
·
OSTI ID:980711