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Radiation effects in SOI technologies.

Journal Article · · Proposed for publication in the IEEE Transactions on Nuclear Science, June 2003 issue.
OSTI ID:917141
;  [1]; ;  [2];
  1. CEA-DIF Bruyeres-Le-Chatel, France
  2. CEA-DIF Bruyeres-Le-Chatel, France
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No abstract prepared.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
917141
Report Number(s):
SAND2003-0809J
Journal Information:
Proposed for publication in the IEEE Transactions on Nuclear Science, June 2003 issue., Journal Name: Proposed for publication in the IEEE Transactions on Nuclear Science, June 2003 issue.
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON