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Structure and Electronic Properties of Amorphous LaAlO3 Film on In0.53Ga0.47As

Journal Article · · Applied Physics Letters
OSTI ID:910079
; ; ; ; ; ; ; ; ; ; ; ; ;
No abstract prepared.
Research Organization:
Stanford Linear Accelerator Center (SLAC)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
910079
Report Number(s):
SLAC-PUB-12652
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ELECTRICAL PROPERTIES
FILMS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LANTHANUM OXIDES
MORPHOLOGY
Other
MATSCI
SUBSTRATES