Structure and Electronic Properties of Amorphous LaAlO3 Film on In0.53Ga0.47As

Journal Article · Mon Jul 16 00:00:00 EDT 2007 · Applied Physics Letters

OSTI ID:910079

Goel, N; Tsai, W; Garner, C M; Sun, Y; Pianetta, P; Warusawithana, M; Schlom, D G; Wen, H; Gaspe, C; Keay, J C; Santos, M B; Goncharova, L V; Garfunkel, E; Gustafsson, T

No abstract prepared.

• Research Organization: Stanford Linear Accelerator Center (SLAC)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 910079
• Report Number(s): SLAC-PUB-12652
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ELECTRICAL PROPERTIES
FILMS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LANTHANUM OXIDES
MORPHOLOGY
Other
MATSCI
SUBSTRATES