New carbon nitride phase by high-dose N ion implantation in glassy carbon
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- School of Physics, University of Melbourne, Parkville, Victoria 3052 (Australia)
The possibility for the synthesis of CN compounds by high-dose N implantation of glassy carbon is investigated. The changes in volume and surface morphology and the retained N concentration as a function of ion dose are reported. For both N and C (used as a control), implantation initially induces compaction in the surface region that saturates at a density above 2.6 g/cm{sup 3}. After formation of this dense surface layer, additional implantation causes the material to expand to accommodate the implanted ions and vacancies formed during the implantation process. For N the swelling is initially linear in fluence up to 5{times}10{sup 17}/cm{sup 2} with a volume increase of 16 A{sup 3} per added N atom; this is twice the volume per atom in the compacted substrate. Above a dose of 5{times}10{sup 17} N/cm{sup 2} the swelling behavior is more complex. A phase change is observed to occur at a dose between 5{times}10{sup 17} and 1{times}10{sup 18}/cm{sup 2}, which is concomitant with at least some of the implanted N being driven to the surface. In addition, micron-sized surface features are seen by scanning electron microscopy, and a significant surface roughening occurs. Ion backscattering spectra have been used to characterize the implanted N profile. The maximum retained concentration was found to be 30 at. %. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Oak Ridge National Laboratory
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 90470
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 78; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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