Effect of interfacial roughness on the phase of quantum wellstates in Cu/Co(001) and Cu/Ni(001) systems

Journal Article · Tue Jan 18 04:00:00 EST 2000 · Physical Review B: Condensed Matter and MaterialsPhysics

DOI:https://doi.org/10.1103/PhysRevB.62.6561· OSTI ID:902442

Choi, H J; Rotenberg, E; Kawakami, R K; Bovensiepen, U; Wolfe, J H; Smith, N V; Qiu, Z Q

It is known that the quantum well (QW) states in magneticlayered structures can be well described by a phase accumulation model(PAM) in which the phase is calculated by assuming a perfectly sharpinterface. In order to verify the validity of this assumption, we studiedthe effect of interfacial mixing on the phase of QW states inCo/Cu/Co(001) and Co/Cu/Ni(001) systems. By controlling the annealingtime, we progressively increased the interfacial mixing on these films.While the interlayer oscillatory coupling changes upon annealing, thecoupling peak positions remain unchanged. This result suggests that thephase of the QW states have little dependence on the interfacialmixing.

• Research Organization: Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US); Advanced Light Source(ALS)
• Sponsoring Organization: USOER
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 902442
• Report Number(s): LBNL--48230; LBNL/ALS--12959
• Journal Information: Physical Review B: Condensed Matter and MaterialsPhysics, Journal Name: Physical Review B: Condensed Matter and MaterialsPhysics Journal Issue: 10 Vol. 62
• Country of Publication: United States
• Language: English

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