Effect of interfacial roughness on the phase of quantum well states in Cu/Co(001) and Cu/Ni(001) systems

Journal Article · Fri Sep 01 04:00:00 EDT 2000 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.62.6561· OSTI ID:20217628

Choi, Hyuk J ^[1]; Rotenberg, E ^[2]; Kawakami, R K ^[1]; Bovensiepen, U ^[1]; Wolfe, J H ^[1]; Smith, N V ^[2]; Qiu, Z Q ^[1]

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1. Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States)
2. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

It is known that the quantum well (QW) states in magnetic layered structures can be well described by a phase accumulation model (PAM) in which the phase is calculated by assuming a perfectly sharp interface. In order to verify the validity of this assumption, we studied the effect of interfacial mixing on the phase of QW states in Co/Cu/Co(001) and Co/Cu/Ni(001) systems. By controlling the annealing time, we progressively increased the interfacial mixing on these films. While the interlayer oscillatory coupling changes upon annealing, the coupling peak positions remain unchanged. This result suggests that the phase of the QW states have little dependence on the interfacial mixing. (c) 2000 The American Physical Society.

• OSTI ID: 20217628
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 10 Vol. 62; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
COBALT
COPPER
EXPERIMENTAL DATA
INTERFACES
NICKEL
PHASE STUDIES
QUANTUM MECHANICS
ROUGHNESS
THEORETICAL DATA