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AN UPDATE ON BIAXIAL THERMAL CREEP OF VANADIUM ALLOYS

Book ·
OSTI ID:902068
A study of the thermal creep properties of two vanadium alloys was performed using pressurized tube specimens. Creep tubes nominally 4.57 mm OD by 0.25 mm wall thickness were pressurized with high-purity helium gas to mid-wall effective stresses below the effective (Von Mises) yield strength. Specimens were fabricated from V-4Cr-4Ti (Heat No. 832665) and a V-3Fe-4Ti alloy. The samples were heated to 650, 700, 725, and 800 degrees C in an ultra-high vacuum furnace and periodically removed to measure the change in tube outer diameter with a high-precision laser profilometer. The normalized minimum creep rate was found to be power-law dependent on the modulus compensated applied stress. The value of the stress exponent varied with the applied stress. At normalized stresses ranging from 0.002 to 0.008 the stress exponent was about 4 and the activation energy was about 300 kJ/mole, which is quite close to the activation energy for self-diffusion in pure vanadium. These results suggest that the predominant mechanism of creep in this regime is climb-assisted dislocation motion. At lower stresses the value of the stress exponent is near unity suggesting that viscous creep mechanisms such as Coble creep or grain boundary sliding may be operative, but the data are too sparse to be conclusive. The reported creep rates from uniaxial tests [1] in vacuum are several times higher than the creep rates measured here. This is probably due to the larger interstitial oxygen concentration of the creep tubing (699 wppm) compared to the sheet stock (310 wppm) used for tensile specimen fabrication. Finally, the creep strength of V-4Cr-4Ti at 700 and 800 degrees C was superior to the V-3Fe-4Ti alloy.
Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
902068
Report Number(s):
PNNL-SA-31910; AT6020100
Country of Publication:
United States
Language:
English

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