Size dependence of melting of GaN nanowires with triangular cross sections

Journal Article · Thu Feb 15 04:00:00 EST 2007 · Journal of Applied Physics, 101(4):043511

DOI:https://doi.org/10.1063/1.2512140· OSTI ID:901180

Wang, Zhiguo; Zu, Xiaotao; Gao, Fei; Weber, William J

Molecular dynamics simulations have been used to study the melting of GaN nanowires with triangular cross-sections. The curve of the potential energy, along with the atomic configuration is used to monitor the phase transition. The thermal stability of GaN nanowires is dependent on the size of the nanowires. The melting temperature of the GaN nanowires increases with the increasing of area cross-section of the nanowires to a saturation value. An interesting result is that of the nanowires start to melt from the edges, then the surface, and extends to the inner regions of nanowires as temperature increases.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 901180
• Report Number(s): PNNL-SA-53257; 8208; KC0201020
• Journal Information: Journal of Applied Physics, 101(4):043511, Journal Name: Journal of Applied Physics, 101(4):043511 Journal Issue: 4 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Environmental Molecular Sciences Laboratory
GALLIUM NITRIDES
GaN
MELTING
MOLECULAR DYNAMICS METHOD
Melting
Molecular dynamics
POTENTIAL ENERGY
QUANTUM WIRES
SIZE
nanowires