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Atomistic Study of the Melting Behavior of Single Crystalline Wurtzite Gallium Nitride Nanowires

Journal Article · · Journal of Materials Research, 22(3):742-747
Molecular dynamics (MD) simulation was used to study the melting behavior of GaN nanowires with Stillinger-Webber (SW) potential. Our results reveal that the melting of nanowires starts from the surface, and rapidly extends to the inner regions of nanowires as temperature increases. The melting temperature of GaN nanowires is lower than that of the bulk GaN, which may associate with large surfaces of nanowires. The melting temperatures increase to saturation values ~3100K and ~2900K when the diameters of nanowires are larger than 3.14 and 4.14 nm for nanowires with [100]- and [110]-oriented lateral facets, respectively.
Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
901179
Report Number(s):
PNNL-SA-51826; 8208; KC0201020
Journal Information:
Journal of Materials Research, 22(3):742-747, Journal Name: Journal of Materials Research, 22(3):742-747 Journal Issue: 3 Vol. 22; ISSN JMREEE; ISSN 0884-2914
Country of Publication:
United States
Language:
English

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