Large melting point hysteresis of Ge nanocrystals embedded inSiO2

Journal Article · Thu May 04 04:00:00 EDT 2006 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.97.155701· OSTI ID:900708

Xu, Q; Sharp, I D; Yuan, C W; Yi, D O; Liao, C Y; Glaeser, A M; Minor, A M; Beeman, J W; Ridgway, M C; Kluth, P; Ager, III, J W; Chrzan, D C; Haller, E E

The melting behavior of Ge nanocrystals embedded within SiO{sub 2} is evaluated using in situ transmission electron microscopy. The observed melting point hysteresis is large ({+-} 17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

• Research Organization: Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Sciences and Engineering Division; National ScienceFoundation Grant DMR-0405472; Intel Robert N Noyce fellowship, UCBerkeley Fellowship, Luce Foundation Fellowship. Miller Institute forBasic Research in Science
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 900708
• Report Number(s): LBNL--59034; BnR: KC0201030
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 15 Vol. 97; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EPITAXY
HYSTERESIS
MELTING
MELTING POINTS
NUCLEATION
TRANSMISSION ELECTRON MICROSCOPY