Germanium Nanocrystals Embedded in Sapphire
Conference
·
OSTI ID:861519
{sup 74}Ge nanocrystals are formed in a sapphire matrix by ion implantation followed by damage. Embedded nanocrystals experience large compressive stress relative to bulk, as embedded in sapphire melt very close to the bulk melting point (Tm = 936 C) whereas experience considerably lower stresses. Also, in situ TEM reveals that nanocrystals ion-beam-synthesized nanocrystals embedded in silica are observed to be spherical and measured by Raman spectroscopy of the zone center optical phonon. In contrast, reveals that the nanocrystals are faceted and have a bi-modal size distribution. Notably, the matrix remains crystalline despite the large implantation dose and corresponding thermal annealing. Transmission electron microscopy (TEM) of as-grown samples those embedded in silica exhibit a significant melting point hysteresis around T{sub m}.
- Research Organization:
- Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic EnergySciences; National Science Foundation
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 861519
- Report Number(s):
- LBNL--57463; BnR: KC0201030
- Country of Publication:
- United States
- Language:
- English
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