Microfabricated strained substrates for Ge epitaxial growth
- Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering Materials Science Program
- Univ. of Wisconsin, Madison, WI (United States). Dept. of Electrical and Computer Engineering
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
The manipulation of strain in micromachined silicon structures presents an opportunity in the control of surface processes in epitaxial growth. With appropriate fabrication techniques, the magnitude, crystallographic direction, and symmetry of the strain at a Si surface can be precisely controlled with this strategy. Synchrotron x-ray microdiffraction techniques allow simultaneous independent measurements of the strain and bending in these structures and serve to calibrate the fabrication process. Bending is the dominant source of strain in a microfabricated Si bridge loaded at its ends by silicon nitride thin films that we have used as a strained substrate in studies of Ge epitaxial growth. The total strain difference between the top and bottom of the bent bridge exceeds 10-3 in present structures and can potentially be increased in optimized devices. These micromachined substrates complement other methods for producing strained silicon and silicon-germanium structures for improved electrical device performance and for fundamental studies of epitaxial growth.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 898730
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
Similar Records
The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates
Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy