An overview of corrosion - wear interaction for planarizing metallic thin films

Conference · Fri Aug 01 00:00:00 EDT 2003

DOI:https://doi.org/10.1016/S0043-1648(03)00225-4· OSTI ID:898301

Ziomek-Moroz, M; Miller, A ^[1]; Hawk, Jeffrey A; Cadien, K ^[2]; Li, D ^[2]

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1. Intel Corporation, Hillsboro, OR
2. Univ. of Alberta, Edmonton, Alberta, Canada

Corrosion-wear interactions play a very crucial role in developing many technological processes. One of them is chemical-mechanical planarization (CMP) of metallic thin films for manufacturing semiconductor devices such as computer chips. In this paper, we present research approaches undertaken in developing CMP for different metallic thin films, such as tungsten and copper in aqueous media. Mechanisms of material removal during CMP are presented. The role of corrosion, wear, and their synergistic effect are explained. The importance of constructing corrosion-wear maps for these complicated tribo-corrosion-metallic thin film systems is addressed. The application of corrosion-wear maps in developing reliable CMP slurries and processes is discussed.

• Research Organization: Albany Research Center (ARC), Albany, OR; Dept. of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta, Canada
• Sponsoring Organization: USDOE - Office of Fossil Energy (FE)
• OSTI ID: 898301
• Report Number(s): DOE/ARC-2003-038
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPUTERS
COPPER
CORROSION
MANUFACTURING
REMOVAL
SEMICONDUCTOR DEVICES
SLURRIES
THIN FILMS
TUNGSTEN
chemical–mechanical planarization
corrosion–wear interaction
metallic thin films