Interpretation of GaAs(110) STM Image Contrast by the Symmetry ofthe Surface Bloch Wave Function

Journal Article · Tue Feb 24 04:00:00 EST 1998 · Journal of Vacuum Science and Technology B

OSTI ID:895506

Jager, N D; Weber, E R; Salmeron, M

A simple qualitative correlation between the corrugationanisotropy observed in scanning tunneling microscope (STM) images ofGaAs(110) surfaces and the symmetry properties of the surface states ispresented. We show that as a function of bias, tunneling from differentelectronic states near high-symmetry points of the surface Brillouin zonegives rise to a distinct corrugation along [11-bar0]and [001]in STMimages. Existing models of the surface band structure are used toidentify these states. We show that at small bias, due to band bendingeffects, the same surface state near the conduction-band edge determinesthe image corrugation in both filled and empty states images of n-typeGaAs. (c)2001 American Vacuum Society.

• Research Organization: Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director, Office of Energy Research
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 895506
• Report Number(s): LBNL--41492
• Journal Information: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 2 Vol. 19
• Country of Publication: United States
• Language: English

Related Subjects

semiconductors
surface states band structure electron density of states III-V