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Title: Voltage-Matched, Monolithic, Multi-Band-Gap Devices

Patent ·
OSTI ID:894202

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99-GO10337
Assignee:
NREL
Patent Number(s):
U.S. Patent No. 7,095,050 B2
Application Number:
TRN: US200701%%60
OSTI ID:
894202
Country of Publication:
United States
Language:
English