Electrical isolation of component cells in monolithically interconnected modules
Patent
·
OSTI ID:873764
- Golden, CO
A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.
- Research Organization:
- Midwest Research Institute
- DOE Contract Number:
- AC36-99GO10337
- Assignee:
- Midwest Research Institute (Kansas City, MI)
- Patent Number(s):
- US 6239354
- OSTI ID:
- 873764
- Country of Publication:
- United States
- Language:
- English
Monolithically interconnected InGaAs TPV module development
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conference | January 1996 |
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Related Subjects
/136/257/438/
absorber
absorber layer
adjacent
adjacent cell
adjacent cells
breakdown voltage
cell
cell electric
cell including
cells
component
comprises
conductivity
conductivity type
connected
contacting
contacts
diode
disposed
dopant
doped
electrical
electrical contact
electrical contacts
electrical isolation
electrically
electrically connected
electrically isolate
electrically isolated
form
formed
including
inter-cell
interconnected
interconnected modules
interconnected photovoltaic
interconnects
interfacial
intervening
isolated
isolation
layer
light
module
modules
monolithically
monolithically interconnected
n-region
n-type
n-type dopant
opposite
orientation
p-region
p-type
p-type dopant
photovoltaic
photovoltaic module
plurality
pn-junction
prevent
primary
receiving
receiving surface
region formed
regions
reverse-breakdown
shunting
single
substrate
sufficient
surface
trench
trenches
trough
type
type dopant
vertical
voltage
absorber
absorber layer
adjacent
adjacent cell
adjacent cells
breakdown voltage
cell
cell electric
cell including
cells
component
comprises
conductivity
conductivity type
connected
contacting
contacts
diode
disposed
dopant
doped
electrical
electrical contact
electrical contacts
electrical isolation
electrically
electrically connected
electrically isolate
electrically isolated
form
formed
including
inter-cell
interconnected
interconnected modules
interconnected photovoltaic
interconnects
interfacial
intervening
isolated
isolation
layer
light
module
modules
monolithically
monolithically interconnected
n-region
n-type
n-type dopant
opposite
orientation
p-region
p-type
p-type dopant
photovoltaic
photovoltaic module
plurality
pn-junction
prevent
primary
receiving
receiving surface
region formed
regions
reverse-breakdown
shunting
single
substrate
sufficient
surface
trench
trenches
trough
type
type dopant
vertical
voltage