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Electrical isolation of component cells in monolithically interconnected modules

Patent ·
OSTI ID:873764
 [1]
  1. Golden, CO
+ Show Author Affiliations

A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.

Research Organization:
Midwest Research Institute
DOE Contract Number:
AC36-99GO10337
Assignee:
Midwest Research Institute (Kansas City, MI)
Patent Number(s):
US 6239354
OSTI ID:
873764
Country of Publication:
United States
Language:
English

References (1)

Monolithically interconnected InGaAs TPV module development conference January 1996

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/136/257/438/
absorber
absorber layer
adjacent
adjacent cell
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breakdown voltage
cell
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cell including
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component
comprises
conductivity
conductivity type
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contacting
contacts
diode
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electrical
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interconnected photovoltaic
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monolithically
monolithically interconnected
n-region
n-type
n-type dopant
opposite
orientation
p-region
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photovoltaic
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prevent
primary
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reverse-breakdown
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vertical
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