Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Improved InGaN epitaxy yield by precise temperature measurement.

Conference ·
OSTI ID:891702

No abstract prepared.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
891702
Report Number(s):
SAND2006-0236C
Country of Publication:
United States
Language:
English

Similar Records

Improved InGaN Epitaxy Yield by Precise Temperature Measurement-Final NETL Report.
Conference · Wed Feb 28 23:00:00 EST 2007 · OSTI ID:1724373
Improved InGaN epitaxy yield by precise temperature measurement :yearly report 1.
Technical Report · Tue Aug 01 00:00:00 EDT 2006 · OSTI ID:891367
Improved InGaN Epitaxial Quality by Optimizing Growth Chemistry (invited).
Conference · Tue Jul 01 00:00:00 EDT 2008 · OSTI ID:1706475

Related Subjects

36 MATERIALS SCIENCE
EPITAXY
GALLIUM NITRIDES
INDIUM NITRIDES
TEMPERATURE MEASUREMENT