Improved InGaN epitaxy yield by precise temperature measurement :yearly report 1.
This Report summarizes the first year progress (October 1, 2004 to September 30, 2005) made under a NETL funded project entitled ''Improved InGaN Epitaxy Yield by Precise Temperature Measurement''. This Project addresses the production of efficient green LEDs, which are currently the least efficient of the primary colors. The Project Goals are to advance IR and UV-violet pyrometry to include real time corrections for surface emissivity on multiwafer MOCVD reactors. Increasing wafer yield would dramatically reduce high brightness LED costs and accelerate the commercial manufacture of inexpensive white light LEDs with very high color quality. This work draws upon and extends our previous research (funded by DOE) that developed emissivity correcting pyrometers (ECP) based on the high-temperature GaN opacity near 400 nm (the ultraviolet-violet range, or UVV), and the sapphire opacity in the mid-IR (MIR) near 7.5 microns.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 891367
- Report Number(s):
- SAND2006-4359; TRN: US200621%%768
- Country of Publication:
- United States
- Language:
- English
Similar Records
High Efficiency InGaN LEDs Emitting in Green, Amber and Beyond (Final Report)
Growth and high quality InGaN films by metalorganic chemical vapor deposition