Two-Hole Localization Mechanism for Electron Bond Rupture of Surface Atoms by Laser-Induced Valence Excitation of Semiconductors

Journal Article · Sun Jul 16 04:00:00 EDT 2006 · Physical Review. B, Condensed Matter and Materials Physics, 74(3):Art. No. 035337

OSTI ID:891128

Tanimura, Katsumi; Inami, E; Kanasaki, J; Hess, Wayne P

We examine the mechanism of electronic bond rupture on semiconductor surfaces induced by laser-generated three-dimensional non-equilibrium valence excitation associated with strong carrier diffusion. For such excited systems, the density of sub-surface valence holes that contribute to two-hole localization on the surface is characterized by quasi Fermi level and effective temperature. The rate of two-hole localization, formulated for equilibrated two-dimensional electronic systems by Sumi [Surf. Sci, 248, 382 (1991)], is re-formulated, and a simple analytical expression is yielded for moderate excitation densities. The resulting theoretical model has been successfully applied in the analysis of recent laser-induced atomic desorption experiments on InP and Si surfaces

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 891128
• Report Number(s): PNNL-SA-48394; 7991; KC0301020
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, 74(3):Art. No. 035337, Journal Name: Physical Review. B, Condensed Matter and Materials Physics, 74(3):Art. No. 035337 Journal Issue: 3 Vol. 74
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
DESORPTION
DIFFUSION
ELECTRONIC STRUCTURE
ELECTRONS
EXCITATION
Environmental Molecular Sciences Laboratory
FERMI LEVEL
HOLES
INDIUM PHOSPHIDES
LASER RADIATION
MATHEMATICAL MODELS
RUPTURES
SEMICONDUCTOR MATERIALS
SILICON
VALENCE