Two-hole localization mechanism for electronic bond rupture of surface atoms by laser-induced valence excitation of semiconductors

Journal Article · Sat Jul 15 04:00:00 EDT 2006 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.74.035337· OSTI ID:20853344

Tanimura, K; Inami, E; Kanasaki, J ^[1]; Hess, Wayne P ^[2]

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1. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
2. Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

We examine the mechanism of electronic bond rupture on semiconductor surfaces induced by laser-generated nonequilibrium three-dimensional valence excitation associated with strong carrier diffusion. For such excited systems, the density of subsurface valence holes that contribute to two-hole localization on the surface is characterized by quasi-Fermi-levels and effective temperature. The rate of two-hole localization, formulated for equilibrated two-dimensional electronic systems by Sumi [Surf. Sci. 248, 382 (1991)], is reformulated, and a simple analytical expression is yielded for moderate excitation densities. The resulting theoretical model has been successfully applied in the analysis of recent laser-induced atomic desorption experiments on InP and Si surfaces.

• OSTI ID: 20853344
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 3 Vol. 74; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
CHARGE CARRIERS
DENSITY
DESORPTION
DIFFUSION
EXCITATION
EXCITED STATES
FERMI LEVEL
HOLES
INDIUM PHOSPHIDES
LASER RADIATION
PHOTONS
RUPTURES
SEMICONDUCTOR MATERIALS
SILICON
SURFACES
VALENCE