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Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and IC Applications

Journal Article · · Microscopy and Microanalysis
Electron tomograph tomography is a well y well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life science applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution 3D structural information in physical sciences. In this paper, we evaluate the capabilities and limitations of TEM and HAADF-STEM tomography for the 3D structural characterization of partially crystalline to highly crystalline materials. Our analysis of catalysts, a hydrogen storage material, and different semiconductor devices shows that features with a diameter as small as 1-2 nm can be resolved in 3D by electron tomography. For partially crystalline materials with small single crystalline domains, TEM tomography provides reliable 3D structural information. HAADF-STEM tomography is more versatile and can also be used for high-resolution 3D imaging of highly crystalline materials such as semiconductor devices.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
888597
Report Number(s):
UCRL-JRNL-217035
Journal Information:
Microscopy and Microanalysis, Journal Name: Microscopy and Microanalysis Journal Issue: 5 Vol. 11; ISSN 1431-9276; ISSN MIMIF7
Country of Publication:
United States
Language:
English

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