Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and IC Applications
Journal Article
·
· Microscopy and Microanalysis
Electron tomograph tomography is a well y well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life science applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution 3D structural information in physical sciences. In this paper, we evaluate the capabilities and limitations of TEM and HAADF-STEM tomography for the 3D structural characterization of partially crystalline to highly crystalline materials. Our analysis of catalysts, a hydrogen storage material, and different semiconductor devices shows that features with a diameter as small as 1-2 nm can be resolved in 3D by electron tomography. For partially crystalline materials with small single crystalline domains, TEM tomography provides reliable 3D structural information. HAADF-STEM tomography is more versatile and can also be used for high-resolution 3D imaging of highly crystalline materials such as semiconductor devices.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 888597
- Report Number(s):
- UCRL-JRNL-217035
- Journal Information:
- Microscopy and Microanalysis, Journal Name: Microscopy and Microanalysis Journal Issue: 5 Vol. 11; ISSN 1431-9276; ISSN MIMIF7
- Country of Publication:
- United States
- Language:
- English
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