Nature of room-temperature photoluminescence in ZnO

Journal Article · Wed Nov 10 23:00:00 EST 2004 · Applied Physics Letters

OSTI ID:887181

Shan, W; Walukiewicz, W; Ager, III, J W; Yu, K M; Yuan, H B; Xin, H P; Cantwell, G; Song, J J

The temperature dependence of the photoluminescence (PL) transitions associated with various excitons and their phonon replicas in high-purity bulk ZnO has been studied at temperatures from 12 K to above room temperature (320 K). Several strong PL emission lines associated with LO phonon replicas of free and bound excitons are clearly observed. The room temperature PL spectrum is dominated by the phonon replicas of the free exciton transition with the maximum at the first LO phonon replica. The results explain the discrepancy between the transition energy of free exciton determined by reflection measurement and the peak position obtained by the PL measurement.

• Research Organization: Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Science and Engineering Division
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 887181
• Report Number(s): LBNL--56622; BnR: KC0201030
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXCITONS
PHONONS
PHOTOLUMINESCENCE
REFLECTION
REPLICAS
TEMPERATURE DEPENDENCE