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Photoluminescence study of solution-deposited Cu2BaSnS4 thin films

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/5.0061229· OSTI ID:1865844
 [1];  [2];  [2];  [3]
  1. Helmholtz-Zentrum für Materialien und Energie, Berlin (Germany); Univ. Leipzig (Germany); Duke University
  2. Duke Univ., Durham, NC (United States)
  3. Helmholtz-Zentrum für Materialien und Energie, Berlin (Germany)
+ Show Author Affiliations

To experimentally identify the character of radiative transitions in trigonal Cu2BaSnS4, we conduct temperature and excitation intensity dependent photoluminescence (PL) measurements in the temperature range of 15–300 K. The low-temperature near band edge PL spectrum is interpreted as the free exciton at 2.11 eV and the bound exciton at 2.08 eV, coupled with associated phonon-assisted transitions. In the low energy region, we assign the dominant defect emission at 1.96 eV to donor–acceptor-pair recombination and the weak broad emission at 1.6 eV to the free-to-bound transition. The activation energies and temperature shift for the radiative transitions are determined and discussed. Above 90 K, the free exciton recombination becomes the dominant radiative transition, with its energy shift mainly governed by the contribution of optical phonons.

Research Organization:
Duke Univ., Durham, NC (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0020061
OSTI ID:
1865844
Journal Information:
APL Materials, Journal Name: APL Materials Journal Issue: 11 Vol. 9; ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (35)

Basic Model Relations for Temperature Dependencies of Fundamental Energy Gaps in Semiconductors journal March 1997
Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu 2 BaSn(S,Se) 4 Absorber journal April 2017
The Role of Sodium as a Surfactant and Suppressor of Non-Radiative Recombination at Internal Surfaces in Cu 2 ZnSnS 4 journal August 2014
Oxygenated CdS Buffer Layers Enabling High Open‐Circuit Voltages in Earth‐Abundant Cu 2 BaSnS 4 Thin‐Film Solar Cells journal December 2016
Ink formulation and low-temperature incorporation of sodium to yield 12% efficient Cu(In,Ga)(S,Se) 2 solar cells from sulfide nanocrystal inks : Ink formulation and low-temperature incorporation of sodium journal May 2012
Cu 2 ZnSn(S,Se) 4 solar cell absorbers processed from Na-containing solutions in DMSO: Cu 2 ZnSn(S,Se) 4 solar cell absorbers journal September 2014
Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band journal November 1960
Optoelectronic and material properties of solution-processed Earth-abundant Cu2BaSn(S, Se)4 films for solar cell applications journal February 2021
8.3% efficient Cu 2 ZnSn(S,Se) 4 solar cells processed from sodium-containing solution precursors in a closed reactor journal May 2015
BaCu 2 Sn(S,Se) 4 : Earth-Abundant Chalcogenides for Thin-Film Photovoltaics journal June 2016
Employing Overlayers To Improve the Performance of Cu 2 BaSnS 4 Thin Film based Photoelectrochemical Water Reduction Devices journal January 2017
Solution-Processed Earth-Abundant Cu 2 BaSn(S,Se) 4 Solar Absorber Using a Low-Toxicity Solvent journal August 2018
Experimental and First-Principles Spectroscopy of Cu 2 SrSnS 4 and Cu 2 BaSnS 4 Photoabsorbers journal October 2020
Sodium Assisted Sintering of Chalcogenides and Its Application to Solution Processed Cu 2 ZnSn(S,Se) 4 Thin Film Solar Cells journal January 2014
Trigonal Cu 2 -II-Sn-VI 4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant photovoltaics journal January 2016
Assessing the defect tolerance of kesterite-inspired solar absorbers journal January 2020
Sharp band edge photoluminescence of high-purity CuInS2 single crystals journal February 2001
Radiative recombination via intrinsic defects in CuxGaySe2 journal April 2001
A shallow state in molecular beam epitaxial grown CuGaSe 2 film detectable by 1.62 eV photoluminescence journal March 1997
Radiative recombination in CuInSe2 thin films journal July 1997
Origin of the deep center photoluminescence in CuGaSe2 and CuInS2 crystals journal July 1999
Temperature quenching of photoluminescence intensities in undoped and doped GaN journal October 1999
Photoluminescence study of deep levels in CuGaTe2 crystals journal November 1999
Temperature dependence of the exciton gap in monocrystalline CuGaSe 2 journal August 2003
The electrical and optical properties of kesterites journal August 2019
Theory of Excitons Bound to Ionized Impurities in Semiconductors journal January 1967
Pair Spectra and "Edge Emission" in Zinc Selenide journal February 1969
Theory of excitons bound to neutral impurities in polar semiconductors journal March 1979
Temperature dependence of the dielectric function and the interband critical points of CdSe journal August 1986
Thermal Dissociation of Excitons Bounds to Neutral Acceptors in High-Purity GaAs journal November 1971
Excitation-power dependence of the near-band-edge photoluminescence of semiconductors journal April 1992
Dependence of the Peak Energy of the Pair-Photoluminescence Band on Excitation Intensity journal October 1972
Exciton binding energies in chalcopyrite semiconductors journal February 2012
Temperature dependence of band gaps in semiconductors: Electron-phonon interaction journal November 2012
Promising quaternary chalcogenides as high-band-gap semiconductors for tandem photoelectrochemical water splitting devices: A computational screening approach journal October 2018

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Related Subjects

36 MATERIALS SCIENCE
Excitonic effects
Phonons
Photoluminescence spectroscopy
Semiconductors
Thin films