Low-temperature hetero-epitaxial growth of Ge on Si by high density plasma chemical vapor deposition.
Conference
·
OSTI ID:886883
No abstract prepared.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 886883
- Report Number(s):
- SAND2005-7130C; TRN: US200617%%486
- Resource Relation:
- Conference: Proposed for presentation at the Materials Research Symposium I held May 17-21, 2006 in San Francisco, CA.
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:886883
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