Low Temperature Ge on Si Epitaxy by High Density Plasma Chemical Vapor Deposition.
Conference
·
OSTI ID:1146535
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1146535
- Report Number(s):
- SAND2014-4639C; 520435
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low-temperature hetero-epitaxial growth of Ge on Si by high density plasma chemical vapor deposition.
Low-temperature hetero-epitaxial growth of Ge on Si by high density plasma chemical vapor deposition.
Germanium-silicon separate absorption and multiplication avalanche photodetectors fabricated with low temperature high density plasma chemical vapor deposited germanium.
Conference
·
Sat Jul 01 00:00:00 EDT 2006
·
OSTI ID:1115270
Low-temperature hetero-epitaxial growth of Ge on Si by high density plasma chemical vapor deposition.
Conference
·
Sat Oct 01 00:00:00 EDT 2005
·
OSTI ID:886883
Germanium-silicon separate absorption and multiplication avalanche photodetectors fabricated with low temperature high density plasma chemical vapor deposited germanium.
Conference
·
Sun Apr 01 00:00:00 EDT 2007
·
OSTI ID:1137302