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CDF run IIb silicon detector: The innermost layer

Journal Article · · IEEE Transactions on Nuclear Science
OSTI ID:886050
The innermost layer (L00) of the Run IIa silicon detector of CDF was planned to be replaced for the high luminosity Tevatron upgrade of Run IIb. This new silicon layer (L0) is designed to be a radiation tolerant replacement for the otherwise very similar L00 from Run IIa. The data are read out via long, fine-pitch, low-mass cables allowing the hybrids with the chips to sit at higher z(/spl sim/70 cm), outside of the tracking volume. The design and first results from the prototyping phase are presented. Special focus is placed on the amount and the structure of induced noise as well as signal-to-noise values.
Research Organization:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Organization:
USDOE Director. Office of Science. Office of High EnergyPhysics, Universities Research Association Inc ContractCE-AC02-76CH03000
DOE Contract Number:
AC02-05CH11231
OSTI ID:
886050
Report Number(s):
LBNL--56098; fermilab-pub-03-374-e; BnR: KA1101020
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 5pt1 Vol. 51; ISSN 0018-9499; ISSN IETNAE
Publisher:
IEEE, none
Country of Publication:
United States
Language:
English

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