Strain mapping on gold thin film buckling and siliconblistering
Conference
·
OSTI ID:883781
Stress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.
- Research Organization:
- Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Science and Engineering Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 883781
- Report Number(s):
- LBNL--58979; BnR: KC0204016
- Country of Publication:
- United States
- Language:
- English
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