Mesoscale X-ray diffraction measurement of stress relaxation associated with buckling in compressed thin films

Journal Article · Tue Jul 01 00:00:00 EDT 2003 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1591081· OSTI ID:815420

Goudeau, Philippe ^[1]; Villain, Pascale; Tamura, Nobumichi; Padmore, Howard A

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1. LBNL Library

Compressed thin films deposited on substrates may buckle depending on the geometrical and mechanical properties of the film/substrate set. Until recently, the small dimensions of the buckling have prevented measurements of their local in plane internal stress distribution. Using a Scanning X-ray Micro diffraction (mSXRD) technique developed at a 3rd generation x-ray synchrotron source, we obtained thin film internal stress maps for circular blisters and telephone chord buckling with micrometric spatial resolution. A fair agreement was found between the film delamination topology observed by optical microscopy and the measured stress maps. We evidenced residual stress relaxation associated with the film buckling: the top is essentially stress-free while adherent region exhibits large compressive stresses.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director, Office of Science. Basic Energy Sciences (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 815420
• Report Number(s): LBNL--53307
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 83; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
43 PARTICLE ACCELERATORS
47 OTHER INSTRUMENTATION
DIFFRACTION
DIMENSIONS
DISTRIBUTION
MECHANICAL PROPERTIES
OPTICAL MICROSCOPY
SPATIAL RESOLUTION
STRESS RELAXATION
STRESSES
SUBSTRATES
SYNCHROTRONS
TELEPHONES
THIN FILM BUCKLING MICRODIFFRACTION MECHANICAL PROPERTIES
THIN FILMS
TOPOLOGY
X-RAY DIFFRACTION