Surface Energy Anisotropy Effects on Pore-Channel Stability:Rayleigh Instabilities in m-Plane Sapphire
Internal, high-aspect-ratio pore channels with their long axes parallel to the m(10{bar 1}0) plane of sapphire were generated through sequential application of photolithography, ion-beam etching and solid-state diffusion bonding. The axial orientation of channels within the m plane was systematically varied to sample a range of bounding-surface crystallographies. The morphologic evolution of these pore channels during anneals at 1700 C was recorded by postanneal optical microscopy. The development and growth of periodic axial variations in the pore channel radius was observed, and ultimately led to the formation of discrete pores. The wavelength and average pore spacing, assumed to reflect the kinetically dominant perturbation wavelength, varied with the in-plane pore channel orientation, as did the time for complete channel breakup. Results are compared to those previously obtained when pore channels were etched into c(0001)-plane sapphire and annealed under similar conditions. The results indicate a strong effect of surface stability on the evolution behavior.
- Research Organization:
- Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Science and Engineering Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 881843
- Report Number(s):
- LBNL--58727; BnR: KC0201030
- Country of Publication:
- United States
- Language:
- English
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