Plasma-assisted molecular-beam epitaxy of AlN(1122) on m sapphire

Journal Article · Mon Mar 26 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2716375· OSTI ID:20960177

Lahourcade, L; Bellet-Amalric, E; Monroy, E; Abouzaid, M; Ruterana, P ^[1]

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1. Equipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)

The authors report on the plasma-assisted molecular-beam epitaxy of semipolar AlN(1122) films on (1100) m-plane sapphire. AlN deposited on m sapphire settles into two main crystalline orientation domains, AlN(1122) and AlN(1010), whose ratio depends on the III/V ratio. The in-plane epitaxial relationships of AlN(1122) on m-plane sapphire are [1123]{sub AlN} parallel [0001]{sub sapphire} and [1100]{sub AlN} parallel [1120]{sub sapphire}. In the case of AlN(1010), the in-plane epitaxial relationships were [1210]{sub AlN} parallel [0001]{sub sapphire} and [0001]{sub AlN} parallel [1120]{sub sapphire}. Growth under moderate nitrogen-rich conditions enables them to isolate the (1122) orientation and to improve the surface morphology of the layers.

• OSTI ID: 20960177
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL GROWTH
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NITROGEN
PLASMA
SAPPHIRE
SEMICONDUCTOR MATERIALS
THIN FILMS