Nanowires, nanostructures and devices fabricated therefrom

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D; Yang, Peidong; Mao, Samuel S; Russo, Richard E; Feick, Henning; Weber, Eicke R; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

Nanowires, nanostructures and devices fabricated therefrom

Patent · 19 April 2005

OSTI ID:879762

Majumdar, Arun ^[1]; Shakouri, Ali ^[2]; Sands, Timothy D ^[3]; Yang, Peidong ^[4]; Mao, Samuel S ^[4]; Russo, Richard E ^[5]; Feick, Henning ^[6]; Weber, Eicke R ^[7]; Kind, Hannes ^[8]; Huang, Michael ^[9]; Yan, Haoquan ^[10]; Wu, Yiying ^[10]; Fan, Rong ^[11]

Orinda, CA
Santa Cruz, CA
Moraga, CA
Berkeley, CA
Walnut Creek, CA
Kensington, CA
Oakland, CA
Schaffhausen, CH
Los Angeles, CA
Albany, CA
El Cerrito, CA

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

DOE Contract Number:: AC03-76SF00098

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Number(s):: US 6,882,051

Application Number:: 10/112578

OSTI ID:: 879762

Country of Publication:: United States

Language:: English

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