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Title: Nanowires, nanostructures and devices fabricated therefrom

Patent ·
OSTI ID:879762
 [1];  [2];  [3];  [4];  [4];  [5];  [6];  [7];  [8];  [9];  [10];  [10];  [11]
  1. Orinda, CA
  2. Santa Cruz, CA
  3. Moraga, CA
  4. Berkeley, CA
  5. Walnut Creek, CA
  6. Kensington, CA
  7. Oakland, CA
  8. Schaffhausen, CH
  9. Los Angeles, CA
  10. Albany, CA
  11. El Cerrito, CA

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
DOE Contract Number:
AC03-76SF00098
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
US 6,882,051
Application Number:
10/112578
OSTI ID:
879762
Country of Publication:
United States
Language:
English

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