One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
Majumdar, Arun, et al. "Methods of fabricating nanostructures and nanowires and devices fabricated therefrom." US 7,569,847, United States Patent and Trademark Office, Aug. 2009.
Majumdar, Arun, Shakouri, Ali, Sands, Timothy D, et al., "Methods of fabricating nanostructures and nanowires and devices fabricated therefrom," US 7,569,847, issued August 4, 2009.
@misc{osti_1013873,
author = {Majumdar, Arun and Shakouri, Ali and Sands, Timothy D and Yang, Peidong and Mao, Samuel S and Russo, Richard E and Feick, Henning and Weber, Eicke R and Kind, Hannes and Huang, Michael and others},
title = {Methods of fabricating nanostructures and nanowires and devices fabricated therefrom},
annote = {One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).},
url = {https://www.osti.gov/biblio/1013873},
place = {United States},
year = {2009},
month = {08},
note = {US Patent