Process Of Bonding Copper And Tungsten

Patent · Tue Jul 18 00:00:00 EDT 2000

OSTI ID:879448

Slattery, Kevin T ^[1]; Driemeyer, Daniel E ^[2]; Davis, John W ^[3]

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1. St. Charles, MO
2. Manchester, MO
3. Ballwin, MO

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

• Research Organization: Sandia National Laboratories
• Assignee: McDonnell Douglas Corporation (St. Louis, MO)
• Patent Number(s): US 6089444
• Application Number: 08/921581
• OSTI ID: 879448
• Country of Publication: United States
• Language: English